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The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically,...
Following our previous study on the material-quality limiting factors of evaporated solid-phase crystallized (SPC) poly-Si thin films fabricated on planar glass for photovoltaic applications, we extend our study to investigate the impurity levels, optical properties, transport properties, and device performance of so-called ??EVA?? (EVAporated Si) solar cells. These potentially cost-effective cells...
Recently, there has been a great deal of work investigating shunting defects in silicon solar cells. With the advancements in such techniques as DLIT, EL, and PL, shunting behavior can now be correlated to specific locations and specific defects. Shunts, which decrease device performance, are revealed under a reverse applied bias. Many of these shunts also generate a photonic emission under reverse...
Structural and microelectrical properties of grain boundaries (GBs) in polycrystalline Si thin films were investigated by electron backscattering diffraction (EBSD) and scanning capacitance microscopy (SCM). The SCM measurements revealed highly nonuniform carrier depletions among the GBs, indicating the variety of electrical properties due to the specific GB structures. The EBSD measurement showed...
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