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Low-frequency noise in double reduced-surface-field lateral-double-diffused-MOS devices has been measured, and the effect of dc stressing is analyzed. The noise components contributing from the extended drain regions under the gate and field oxides were differentiated from the channel noise by a series of experimental and analytical techniques. The effect of voltage stressing on each noise component...
Low frequency noise (LFN) characteristics of high voltage double reduced-surface-field LDMOS with SiO2 as gate dielectric is investigated and the effect of DC stressing has been observed. It has been found that the LDMOS does not follow typical noise behavior of ordinary MOSFETs as extended drain attributes a significant role at higher gate overdrive voltages. Here, separation of the overall measured...
We present novel and cost effective integration schemes with high performance analog and high voltage components to enable system-on-chip (SOC) designs in advanced CMOS technologies. The new transistors have superior analog performance compared to the standard logic devices resulting in significant area savings and greater analog functionality. The new high voltage (HV) transistors enable reliable...
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