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Bulk GaN crystals are regarded as the most promising candidates for substrates for optoelectronic, high power and high frequency electronic devices. In this paper some principles of ammonothermal method of bulk gallium nitride growth are presented. Excellent structural properties and wide spectrum of electrical parameters of obtained this way truły bulk GaN crystals are shown. In considered crystals...
Opisano własną konstrukcję komputerowo sterowanego układu lock-in. Kluczowe elementy - detektor fazy i generator częstotliwości odniesienia wykonano w technice cyfrowej, w oparciu o język VHDL i programowalne układy logiczne FPGA. Przebiegi sinusoidalne generowano za pomocą rozwinięcia w szereg Maclaurina. Pokazano, że przy wydłużonym czasie zbierania próbek i uśrednianiu wyników można przeprowadzić...
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