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FINFET devices have generated an alternative convincing next-generation foundation in IC industry. The outrageously leaky Ioff current gets controlled as the channel length is imperatively shortened down to 40nm and below. Somehow, the 3-dimensional fin structure makes itself distinct from the traditional MOSFET transistors, e.g., the threshold voltages (Vt). In some channel lengths, Vt may turn to...
FINFET devices have demonstrated convincing low leaky Ioff current for the last decade and continue to take the leading role approaching to 10nm channel length. The imperative must for the next generation MOSFET transistors with 3-dimensional fin structure overwhelmingly replace the traditional MOSFET ones. However, the threshold voltages (Vt), in some cases, may turn out to be negative on NFINFET...
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