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A BJT named ‘biristor’, a term derived from ‘bi-stable resistor’, is demonstrated for 4F2 high speed volatile memory applications. For a floating body cell, a gate-less vertical silicon pillar, which is an n-p-n BJT with an open-base, is employed, whereas for its control device, a MOSFET composed of a vertical silicon pillar surrounded by a gate is utilized. A 4F2 memory cell array is realized by...
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