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In this paper, we present a new isolated Low Vgs NLDMOS in 0.35um BCDMOS process. The proposed LDMOS is fully isolated from substrate and has very lower Rsp(specific on-resistance) than other competitors. This device can apply a negative bias to drain and it can be used in AMOLED application. The proposed LDMOS devices in 30–40V ranges have the lowest Rsp with other competitors in 0.13–0.35um BCDMOS...
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