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Al2O3 films were deposited on n-type crystalline Si (c-Si) wafers by atomic layer deposition using Al(CH3)3 and H2O as precursors. Surface anti-reflectance and passivation performances were investigated. Average reflectances between 2.8 and 4.2% were obtained for Al2O3 coated textured Si with Al2O3 thickness ranged between 100 and 70nm. Wide thickness window for low reflectance between 2.8 and 4.2%...
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