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A comparative study of AlGaN/GaN high-electron-mobility transistor (HEMT) surface passivation using ex situ and in situ deposited SiNx is presented. Performing ex situ SiNx passivation increased the reverse gate leakage and off-state channel leakage by about three orders of magnitude. The in situ SiNx layer was characterized using transmission electron microscopy (TEM) and capacitance–voltage...
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