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We present a quantitative transmission electron microscopy (TEM) study about the interface structure and strain state of buried InAs nano-clusters in Si(001) grown by molecular beam epitaxy. The nano-clusters show a typical polyhedral shape of 4–12nm in diameter with {111} and {001} interface planes. Moiré fringe analysis based on dark-field images and high-resolution (HR) TEM reveals that the nano-clusters...
We report the optimization of electron beam lithography and inductively coupled plasma (ICP) dry etching processes to fabricate pre-patterned Si (100) substrates with sub-100nm holes with controlled size and shape. An efficient in situ cleaning sequence based on atomic hydrogen cleaning at 500°C combined with thermal oxide desorption at 750°C confirmed by reflection high energy electron diffraction...
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