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We fabricated broad-area laser diodes containing highly stacked InAs quantum dots by using the strain-compensation technique. The diodes exhibited laser emission at 1529 nm in the pulsed mode with a large characteristic temperature of 113 K.
A 4-THz injection-seeding bandwidth (1042 -1057 nm) was successfully demonstrated with a 1-mum optical-waveband quantum-dot (QD) Fabry-Perot laser-diode. A Sb-molecule-sprayed InGaAs/GaAs QD structure in its active-medium was grown by molecular-beam-epitaxy with a GaAs-substrate.
We fabricated laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique, which showed laser emission at 1.58 mum above the threshold current of 162 mA in pulsed mode.
We fabricated laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique, which showed laser emission at 1.7 mum above the threshold current of 400 mA in pulsed mode.
We demonstrate scale-dependent near-field photoluminescence of InAs quantum dots. Our analysis, based on eigen-decomposition, leads to a novel non-pixelated memory architecture thanks to spectral diversity obtained at an optimal scale of optical near-fields.
We demonstrated nanophotonic gate operation of coupled InAs quantum dots using the pump-and-probe micro-photoluminescence measurement. The result indicates that we can select either AND- or NOT-gate operation by controlling the pulse intensity.
We observed the dark states of coupled InAs quantum dots via an optical near-field. The experimental results show that the dipoles of near-field coupled InAs quantum dots are distributed with an anti-parallel configuration.
We review our successful growth of stacks of InAs quantum dots (QDs) on InP(311)B substrates using a novel strain-control technique and improved the size uniformity of the QDs by precisely controlling the composition of the strain-compensating spacer layers. In a stack of 150 InAs QD layers, the density of the QDs exceeds 5times1012/cm2 which cannot be obtained using conventional techniques for fabricating...
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