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We demonstrated nanophotonic gate operation of coupled InAs quantum dots using the pump-and-probe micro-photoluminescence measurement. The result indicates that we can select either AND- or NOT-gate operation by controlling the pulse intensity.
We have formed erbium-doped silicon suboxide by vacuum deposition of erbium and silicon monoxide and subsequent annealing. The samples exhibited strong photoluminescence intensity at 1.5 μm at room temperature.
Simulation, fabrication, characterization of two-dimensional photonic crystals and fabrication of nanoprobe-assisted site-controlled quantum dots for large optical non-linearity are presented for photonic crystal and quantum dot-based ultra-small and ultra-fast all optical switches
Summary form only given. An important issue for photonic crystals is how to realize 3D photonic crystals in the optical wavelength region. In this paper, we propose a new method by utilizing a wafer-bonding technique combined with a microfabrication technique.
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