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Reactive Gas Source Epitaxy has been employed to deposit SiGeSn/GeSn alloys on virtual Ge/Si (100) substrates. Optically pumped Fabry-Perol and a-disc lasers have been fabricated emitting from 2.0–2.6 μm in dependence of the Sn concentration.
We present photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.%. Calculations predict a net gain of 572 cm−1 for partially relaxed and moderately doped Ge0.88Sn0.12.
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