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This paper reports thiosulfate-enhanced effect of chloride ions on the passivity degradation of Alloy 800 and discusses how thiosulfate influences the semiconductor properties as well as breakdown of the passive films. Experimental results reveal that in concentrations of 10 −6 to 0.075mol/L, thiosulfate lowers the breakdown potential of Alloy 800 by 100–400mV in solutions containing 0.6mol/L...
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