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The intrinsic gettering of nitrogen-doped Czochralski (NCZ) and nitrogen-undoped Czochralski (CZ) silicon annealed in argon and nitrogen ambient has been investigated by three-step annealing. It is found that the threshold oxygen concentration for effective precipitation is about 4.8×10 17 cm −3 at 1150°C. No difference of the denuded zone (DZ) width between the NCZ and CZ silicon...
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