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The channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories is investigated. While the trapped charge profile-dependent overerasure is observed in 10-μm-wide device, it is suppressed in 0.22-μm-wide device. Both the overerasure suppression and gradual positive threshold voltage shift in narrow device are explained...
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