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Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due to their the properties of high performance and low cost. The sensitivity of 10Gb/s APD reached −29.5dBm at 1550 nm with the bit error rate of 1 × 10−12...
Our germanium on silicon avalanche photodiodes (Ge/Si APDs) show a 1310nm sensitivity of −22.5dBm at 25.78Gb/s, which is, to our knowledge, the best sensitivity in reported 25Gb/s avalanche photodiodes.
We developed world first 25Gb/s normal incident germanium silicon avalanche photodiode (Ge/Si APD) in a CMOS commercial foundry. The vertically illuminated Ge/Si APDs have a large 3-dB bandwidth (>18GHz) at a high gain (M=8) which is suitable for 100GBASE-ER4 application.
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