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FinFET is the most promising double-gate transistor architecture to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-FinFET have 1200 and 915 ??A/??m drive current respectively at 100 nA/??m leakage under 1V. To our knowledge this is the best FinFET drive current at such scaled...
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