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Two antimonide-based compound semiconductor (ABCS) microstrip MMICs, single-stage and three-stage ultra-low-power wideband 0.01-11 GHz low-noise amplifiers using 0.1-mum gate length InAs/AlSb metamorphic HEMTs, have been fabricated and characterized on a GaAs substrate. From 0.3-11 GHz, the single-stage wideband LNA demonstrated a typical associated gain of 16 dB with less than 1.7 dB noise figure...
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