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We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical...
According to the procurement agreement with the International Thermonuclear Experimental Reactor project, the Institute of Plasma Physics, Chinese Academy of Sciences (ASIPP) in China is responsible for the construction and performance testing of 31 sets of feeder systems, which contain also 60 high-temperature superconducting (HTS) current leads. In 2014/2015, three pairs of prototype current leads...
In this work, we investigated the failure behavior of a commercial chip size packaging (CSP) under coupling fields of electrical current and thermal cycles. The failure process was real-time monitored through the response resistance change. Under the coupling condition, the lifetime was much shorter than that in single thermal cycle condition. Instead of the void accumulation mechanism, the excessive...
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