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The reaction of acetone with Si(111) surface between 750 and 900 o C has been investigated by reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From RHEED observation, 3C-SiC spots were observed, which confirmed the epitaxial growth of 3C-SiC, and the twinning streaks appeared clearly by increasing the surface...
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