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Three dimensional (3D) integration technology merged with neuromorphic computing system plays a significant role for the implementation of energy efficient advanced neurobiological architecture. This work explores a novel 3D neuromorphic system that utilizes the Through Silicon Via (TSV) interconnects to build the complicated hardware neural structure. It allows the ultra-high density integrated system...
This work details how a neuromorphic system is simulated with a 3D integrated electronic system. The neural system is modeled as a 3D integrated circuit to investigate a highly efficient neuromorphic computing system that ameliorates implementation issues induced by prior 2D circuital systems. A 3D neuronal model incorporating the Through Silicon Via (TSV) is constructed and the performance is simulated...
Neurophysiological architecture using 3D integration technology offers a high device interconnection density as well as fast and energy efficient links among the neuron and synapses layers. In this paper, we propose to reconfigure the Through-Silicon-Vias (TSVs) to serve as the neuronal membrane capacitors that map the membrane electrical activities in a hybrid 3D neuromorphic system. We also investigate...
Neuromorphic computing is an emerging technology that describes the biological neural systems and implementation of its electrical model in complementary metal-oxide-semiconductor (CMOS) VLSI system. Three dimensional (3D) integration can be applied in hardware implementation of neuromorphic computing that provides high device interconnection density using fast and energy efficient links with excellent...
In the millimeter wave (mmW) frequency range, the root mean square height of the through silicon via (TSV) sidewall roughness is comparable to the skin depth, and hence, becomes a critical factor for TSV modeling and analysis. In this paper, the impact of the TSV sidewall roughness on electrical performance, such as the loss and impedance alteration in the mmW frequency range, is examined and analyzed...
Electrical modeling of through silicon via (TSV) is very important for three dimensional (3D) system design and analysis. In this paper, we present our study on the impact of sidewall roughness on the TSV electrical performance in the ultra-broad band range. Our analysis shows that the root mean square height of the rough sidewall is comparable to the skin depth in extremely high frequency (> 20G...
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