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A technique for invisible image capture using a photosensor array based on transparent conducting oxide semiconductor thin‐film transistors and transparent interconnection technologies is presented. A transparent conducting layer is employed for the sensor electrodes as well as interconnection in the array, providing about 80% transmittance at visible‐light wavelengths. The phototransistor is a Hf–In–Zn–O/In–Zn–O...
A gate‐modulated nanowire oxide photosensor is fabricated by electron‐beam lithography and conventional dry etch processing.. The device characteristics are good, including endurance of up to 106 test cycles, and gate‐pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus...
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