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The Co-doped SiC films were developed by radio frequency-magnetron sputtering. After annealing at high temperatures, the amorphous structure of the films transformed into the structure of 3CSiC lattice and the secondary phase of the compounds CoSi. Some of the Co atoms began to occupy the C site of the SiC lattice in the form of Co2+ ions with the annealing temperature rising above 600 °C, and formed...
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