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Gallium arsenide material has been deposited via metal organic chemical vapor deposition (MOCVD) at growth rates varying between 14 µm/hr and 56 µm/hr. Photovoltaic device results indicate a 6–7% relative decrease in efficiency between 14 and 56 µm/hr GaAs solar cells, due to a reduction in short-circuit current and open-circuit voltage. By simulating the experimental characterization data, it is...
The laser pulse energy thresholds for single-event upset measured by single photon and two photon absorption are measured and compared for Sandia SRAMs and DPSRAMs, and IBM 45-nm SRAMs for devices with and without the back substrate removed. These results are also compared to heavy-ion results taken on the same devices. Sandia SRAM data taken on different test dates resulted in considerably different...
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