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Aluminum nitride (AlN) thin films were prepared using reactive cathodic vacuum arc deposition in conjunction with a macrodroplet shield plate. Various bias conditions, such as no bias (floating), 0-V bias (same potential as anode), DC bias of -10 to -30 V, and RF power of 25-200 W, were applied to the substrate table. For floating bias, a-axis-oriented film was obtained. For 0-V bias, the films prepared...
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