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Optimal design for nanowire FETs beyond 22 nm technology node is presented using numerical 3D simulation and physical analysis. Our results suggest that design optimization associated with the wire diameter could achieve performance benefits in the nanowire FET technologies. Small wire diameter is not necessary for performance, though it favors device scaling.
In this paper, we present a low dropout voltage regulator (LDO) which can be programmed to generate four output voltages (3.3 V, 2.5 V, 1.8 V, and 0 V) by the external control signals. Between the error amplifier and the power transistor, we place a simple buffer so that the power supply rejection (PSR) of LDO can be improved. The design specification of the maximum load current is 100 mA. The proposed...
Temperature-dependent characteristics of high electron mobility transistors (HEMTs) with sulfur and SiNx passivations are comprehensively studied and demonstrated. Experimentally, for the studied device with formal passivations, better DC and microwave characteristics are obtained over wide operating temperature range. In particular, as compared with the device only with sulfur passivation, the slightly...
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