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In this paper, a broadband fourth-harmonic mixer based on gallium arsenide (GaAs) Schottky barrier diodes working at 80–100GHz is designed. This fourth-harmonic mixer is simulated and attains low conversion loss below 14dB in the whole band. The design process and simulation results are explained in detail.
In this paper, a 620–690GHz sub-harmonic mixer using monolithic GaAs integrated schottky diodes is presented in order to remove the mismatch caused by manual assembly of the flip chip diode. The monolithic microwave integrated circuit integrates a Schottky anti-parallel diodes pair in a longitudinal configuration. We mostly analyzed the influence caused by diode position offset and conductive adhesive...
This paper describes the planar schottky diode based subharmonic mixers currently being developed at the EHF Key Laboratory of Fundamental Science of Universtity of Electronic Science and Technology of China. Hybrid and integrated GaAs Schottky diode based 330GHz and 420GHz subharmonic mixers are designed, fabricated and measured. Test results show that the minimum conversion loss of 330GHz monolithic...
This letter presents the design of a wide band 8th harmonic mixer, using an anti-parallel pair of planar Schottky GaAs flipp-chip diodes fabricated onto a suspended quartz-based microstrip circuit. Simulations predict conversion losses are well below 23dB from 330 to 500GHz. The design offers an solution to simplify the local oscillator signal generation and realize the goal of low frequency conversion...
This paper presents the design and simulation investigation of a 850GHz low-loss subharmonical mixer based on GaAs Schottky barrier diodes. Our group analyzed the topology of subharmonic mixer, device modeling of Schottky diodes, the 3D electromagnetic passive circuits and the mixer circuitry with optimum performance. The antiparallel diodes pair is fabricated from China Electronics Technology Group...
In this paper, a 420GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. We combine the diode 3D model, nonlinear model and passive circuit by field-circuit method, then optimize the circuit through harmonic balanced method, finally study the GaAs monolithic integrated 420GHz sub-harmonic mixer. Simulated results for the mixer achieved DSB conversion loss...
As the demand for data consumption increasingly grows, the current wireless systems in microwave frequency region are not able to provide sufficient bandwidth for the future need of communication capacity. Therefore, the availability of vast bandwidth in terahertz (THz) and sub-THz (100 GHz – 10 THz) becomes a major advantage to exploit for wireless communication. In this paper, a transmission experiment...
In this paper, a 420GHz Sub-Harmonic Mixer based on planar schottky diode is presented. The mixer circuit was fabricated on the 50um thick quartz substrate with a pair of anti-parallel flip-chipped schottky diodes. The planar schottky diode is fabricated in China Electronics Technology Group Corporation-13(CETC-13). Simulated results for the 420 GHz mixer achieved DSB conversion loss of 6.2dB@404GHz...
The letter presents a fourth-harmonic mixer based on planar schottky diode working at 330–500GHz. The result of simulation predicts that conversion loses well below 14dB from 369GHz to 477GHz with 6 dBm of local oscillator power. Therefore, the good performance of mixers in wide bandwidth and low conversion loss provides designers with a better choice.
In this paper, a 340GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. The mixer circuit is fabricated on a 12um GaAs substrate included planar Schottky diode in a balanced configuration, the passive RF/LO and IF matching networks, filtering circuits, as well as transitions from waveguide to suspended micro-strip. Simulated results for the 340 GHz mixer...
Terahertz electromagnetic radiation (from 0.1THz to 10THz) that lies in the boundary region between light and radio waves has attracted much attention in recent years due to its certain extraordinary properties. This paper presents the design and simulation investigation of a 0.66THz low-loss subharmonical mixer based on GaAs Schottky barrier diodes. The antiparallel diodes pair is fabricated from...
This paper describes the design, simulation and measurement of a Schottky sub-harmonic mixer working around 370GHz. The device is based on an anti-parallel pair of planar Schottky diodes flip-chip mounted onto a single quartz-based microstrip circuit. The best DSB noise temperature of about 3500K is measured with LO at 184.5GHz. The performance of the mixer at room temperature and the liquid nitrogen...
In this paper, a terahertz wideband sub-harmonic mixer based on the Schottky anti-parallel diodes pair and MASTER technology is presented. The mixer circuit is fabricated on a 0.05mm quartz substrate including Schottky anti-parallel diodes pair, RF/LO transition, IF matching networks and filtering circuits. The diode circuit is fabricated on a quartz substrate directly by MASTER technology. The research...
In this paper, a 325GHz Sub-Harmonic mixer with 70GHz bandwidth is presented. It will be used for a ultra wideband remote sensing system. The mixer circuit included planar Schottky diode in a balanced configuration, the passive RF/LO and IF matching networks, filtering circuits, as well as transitions from waveguide to suspended micro-strip. Simulated results for the 325GHz mixer achieved DSB conversion...
A 2–5 GHz MMIC double-balanced Gilbert mixer (DBGM) with a lumped-elements LO balun and IF buffer has been designed, fabricated in GaN-on-Si HEMT MMIC technology and characterized with on-board measurements. This proposed mixer uses on-chip capacitively coupled resonating elements to isolate the dc currents of RF and LO route, which could help to realize low voltage and improve the noise figure (NF)...
A real-time wireless data link experiment at a carrier frequency of 120GHz is presented in this paper. Both the receiver and transmitter employ Schottky diode subharmonic mixers as direct frequency up- and down-converters without introducing amplifiers at the first stage of the receiver or at the last stage of the transmitter. The conversion loss of the subharmonic mixer is less than 10dB over 105∼135GHz...
This paper presents the design and fabrication of feed horn antenna integrated 380 GHz sub-harmonically pumped mixer's split cavity block. The mixer circuit is fully integrated with the microstrip circuit and the flip-chipped diode (planar GaAs air-bridged Schottky anti-parallel diode, which was designed and fabricated by millimeter technology group, Rutherford Appleton Laboratory, UK) on suspended...
This paper presents a millimeter-wave (mmWave) mixer in 0.13μm SiGe HBT technology. The single-ended mixer is designed to down convert modulated mmWave signals with high speed up to 10Gbps. The on-wafer measured results show that, the fabricated 0.7mm × 0.5mm mixer exhibits a 10dB return-loss bandwidth covering the whole D-band (110–170GHz) at RF input port.
This paper presents a new improved compact, low-insertion loss, sharp-rejection, and easy to manufacture compact microstrip resonant cell (CMRC) structure [1] as microstrip or suspended-substrate microstrip lowpass filter (LPF) used in terahertz (THz) Subharmonically pumped mixer (SHM). In comparison to traditional high/low step-impedance filter used in SHM, this improved CMRC structure could shorten...
The paper presents the design and fabrication of a low-loss fixed-tuned 118 GHz subharmonically pumped mixer, using commercially available GaAs Schottky barrier diodes flip-chipped onto a suspended microstrip circuit. The simulation performance of the mixer exhibits a double side band (DSB) conversion loss below 10 dB over the range of 113-123-GHz, with 6 mW of local oscillator (LO) power. At 118...
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