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A 1.2 V 4 Gb DDR4 SDRAM is presented in a 30 nm CMOS technology. DDR4 SDRAM is developed to raise memory bandwidth with lower power consumption compared with DDR3 SDRAM. Various functions and circuit techniques are newly adopted to reduce power consumption and secure stable transaction. First, dual error detection scheme is proposed to guarantee the reliability of signals. It is composed of cyclic...
A higher performance DRAM is required by the market due to the increasing of bandwidth of networks and the rise of high-capacity multimedia content. DDR4 SDRAM is the next-generation memory that meets these demands in computing and server systems. In comparison with current DDR3 memory, the major changes are supply voltage reduction to 1.2V, pseudo open drain I/O interface, and data rate increase...
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