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In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) and Au/c-Si (single-crystal Si) eutectic reaction in anodic wafer bonding process. We measured different resistances of di fferent bonding areas under different bonding temperature. When bonding temperature is under 370 °C, the resistance of the different areas (from 200 µm2 to 1000 µm2) fluctuate...
This paper presents a new method for achieving Au/aSi (amorphous Si) eutectic wafer-level bonding. The Si-Glass wafer bonding was conducted with Au layer patterned on glass wafer and amorphous Si layer on silicon wafer. The amorphous Si here was transformed from the single crystal silicon by the Argon implantation process. A novel torsional strength test structure was proposed and applied for characterization...
Two series of devices, bonding quality testing devices and torsional strength testing devices, were designed to fully investigate the mechanical strength of the micro anchor-beam combined structure, which is fabricated by silicon-on-glass process. It's proved that the bonding quality of the anchor degenerates severely when the anchor size becomes very small. And the results of anodic bonding quality...
The piezoresistive pressure sensor has been used to measure the dynamic pressure as well as in high temperature environment. In this paper, a novel TSV 3D packaged pressure sensor is proposed for high temperature environment and dynamic measurement. The pressure sensors and the silicon carrier with TSV are flip chip bonded using Au/Sn eutectic for hermetic encapsulation. In order to reduce the stress...
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