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It is possible to find the best thermal annealing temperature T for GaAs/Si having a definite GaAs layer thickness through high temperature rapid thermal annealing method with Surface Photo-Voltage (SPV), Microwave Photoconductivity Spectrum (MPCS) and Double Crystal X-ray Diffraction (DCRD). It is expected to obtain the longest minority carrier diffusion length L p of GaAs epitaxial layer...
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