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The microstructure of semi-polar (112¯2) GaN templates grown on pre-structured r-plane sapphire by metal–organic vapor phase epitaxy (MOVPE) followed by hydride vapor phase epitaxy (HVPE) has been characterised by transmission electron microscopy (TEM). It is found that dislocations originating from the inclined c-plane-like GaN/sapphire interface bend and then terminate either at the coalescence...
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