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This paper presents an optimized doping strategy for vertical-channel three-dimensional (3D) NAND flash. This NAND flash is junction-free without dopant inside the string. Source side near SSL and drain side near GSL are both n-doped junction, providing electron in +FN programming. P-doped substrate provides hole in −FN erasing [1]. Carrier source in both program and erase does not depend on GIDL...
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