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Using the ZnO nanowire emitters with the photoconductor as the anode, the concept of a light-responsive field emission display (FED) was demonstrated. The brightness of display can be automatically increased with the increasing of external light-intensity. Additionally, the photo/dark current ratio can be controllably adjusted by changing the device parameters. The response of conductivity of photoconductor...
ZnO nanowire field emitter arrays with non-coplanar focus electrode structure was designed. A simulation was conducted to verified the focusing ability of the focus electrode structure. The designed structure was realized successfully and the growth condition of ZnO nanowires in the structure was studied.
Field Emission Pattern Image of Carbon Nanotubes has been captured by using electron beam scanning analyzer. The measurement showed that the Faraday cup scanning method can provide a high resolution field emission sites distribution measurement (the best resolution is up to 0.01mm), which is higher than that using the transparent anode method.
α-Fe2O3 nanomaterials with different morphology parameters were prepared by varying growth temperature in the thermal oxidation process. After current aging treatment, emission current density increased from 0.05 mA/cm2 to 5.70 mA/cm2 under applied electrical field of 7.8 MV/m.α-Fe2O3 nanoflakes prepared under 350 °C exhibits low threshold field of 5.1 MV/m. Current aging treatment was carried out...
ZnO nanowires have potential applications as large area field emitters for plat panel x-ray source and high emission current is needed for such application. In this study, patterned ZnO nanowires with different separations have been fabricated on ITO coated glass substrate by thermal oxidation technique. It is found that the separation of the patterns affects the growth of ZnO nanowires. The field...
Lanthanum hexaboride (LaB6) nanowires have attracted much attention due to their outstanding physical properties. In order to enhance the developments of LaB6 nanowires, it is essential to study the field emission (FE) properties of LaB6 nanowires in different environments. Here, we investigate the effect of oxygen (O2) on the FE behaviors of LaB6 nanowires. And it is found that the oxygen content...
Fluorine doping of ZnO nanowires was realized by using a biased CF4 plasma treatment. The morphology, work function, electrical characteristics and field emission properties of ZnO nanowires were investigated before and after CF4 plasma treatment. Though lowered work function and resistance were observed, the ZnO nanowires exhibit higher turn-on field after CF4 plasma treatment. The results were explained...
SmB6 is believed as an ideal candidate for FE applications because of their unique properties. Up to date, the effect of image potential on the field emission (FE) behaviors of one-dimensional nanostructures is still unclear in experiments, and thus it becomes a challenging issue for the researchers. In this paper, the effect of image potential on FE properties of SmB6 nanowires are detailed studied...
The B/LaB6 hierarchical heterojunction nanostructures have been successfully fabricated on Si substrate by CVD technique. The branch-like morphology may be beneficial to improving their field emission (FE) properties by increasing the aspect ratio or growth density of the emitters. The results show that the threshold field of the B/LaB6 branch-like nanoheterojunctions is 21.6 V/μm (@1 mA/cm2) and...
For application in a diode flat-panel X-ray source, large area patterned WO3 nanowires were grow on indium-tin-oxide (ITO) glass substrate by using a thermal oxidation method. It is found that the thickness of the ITO layer influences the length of the prepared WO3 nanowires. The phenomenon is attributed to the change of stress of the ITO glass substrate. The field emission properties of WO3 nanowires...
ZnO nanowire field emitter arrays with self-aligned focus electrode were designed. The simulation of the electron trajectory verified the focusing characteristics of designed structure. The ZnO nanowire field emitter arrays were successfully fabricated and the addressing operation was realized.
Nanofabrication procedure was developed to obtain uniform zinc oxide (ZnO) nanowire arrays. The geometric uniformity of the nanowire and the surface smoothness were improved by optimizing the fabrication processes. Array of gated ZnO nano-emitter was fabricated to realize the low driving voltage triode structure.
As a typcial kondo insulator, SmB6 has attracted most of attention in recent years. But their corresponding nanostructures are hard to fabricate due to the growth technique. In this paper, uniform SmB6 nanocone arrays have been successfully fabricated by a simple chemical vapor deposition (CVD) method. The field emission (FE) behaviors of SmB6 nanocone arrays were investigated to reveal their surface...
A gold-nickel buffer layer is used to improve the adhesion of VACNT and silicon substrate. The VACNTs exhibit an excellent adhesive behavior after a post-annealing process. The interfacial morphology and structure are characterized by SEM. The physical mechanism is also discussed.
A method for in-situ measuring work function of a free standing nanowire has been developed. By using this technique, in-situ study of the work function, electrical characteristic and field emission property of individual ZnO nanowires has been carried out. This method is proven to be useful for understanding the field emission characteristics of individual nanowire.
Crystallinity and field emission characteristics of few-layer graphene (FLG) have been investigated synchronously using in-situ transmission electron microscope (TEM). The field emission measurement showed that the decrease of crystallinity results a poor field emission characteristics. The reason is mainly attributed to the decline of electrical conductivity of FLG.
Patterned tungsten oxide (WO3) nanowires are grown on ITO glass substrate by a thermal oxidation without any catalyst. Field emission measurements show that the field emission current of WO3 nanowires can be dramatically enhanced by a conditioning process. After conditioning, the turn-on voltage of the WO3 nanowires decreases from 6.50 MV/m to 3.28 MV/m. The phenomenon is related the oxygen adsorbate...
Modulation of field emission current from ZnO nanowires (ZnO NWs) by a high voltage amorphous silicon thin film transistor (HVTFT) is reported. The emission current was modulated in about three orders of magnitude. Precise control and stabilization of emission current were achieved.
ZnO nanowires were treated with ammonia(NH3) plasma. Electrical and field emission properties of the same individual ZnO nanowire were investigated before and after NH3 plasma treatment. Lowered work function, increased resistance and lowered turn-on field was observed. Ammonia molecule substitutional defect on Zn site was attributed to the observed phenomena.
The temperature dependence of field emission characteristics from ZnO nanotrees is studied. An evident thermo-enhanced field emission effect is found in field emission from ZnO nanotrees. The turn-on field decreases obviously from 15.3 MV/m to 11.9 MV/m when the temperature increases from 293 to 773K. A defect-assisted emission model is used to explain the results.
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