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Here, we analyze the chemical vapor deposition of semiconductor crystals by selective area growth in a non-planar geometry. Specifically, the growth process in laterally and vertically confined masks forming single-crystal GaN on SiO2 by metal-organic chemical vapor deposition is considered in detail. A textured AlN seed is used to initiate growth of oriented GaN selectively through the mask, allowing...
We have studied the mechanism of pulsed NH3 growth in metalorganic chemical vapor deposition by investigating the influence of interruption duration of NH3, growth temperature, pressure and NH3 flow rate on the growth behavior of GaN selective area growth (SAG). The essential mechanism of pulsed NH3 is to create a short-term metal-rich growth condition, thus facilitating the growth of {101¯1} facets...
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