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Over the past few years, temporary bonding has expanded together with the development of 3D stacked IC (SIC) technology. As maturity of the various processes has constantly improved, process yield and process impact on device performance have become key questions to answer. To further answer the refraining elements preventing a more massive technology adoption, in-line testing of the device throughout...
Over the past few years, temporary bonding has spread together with the development of 3D stacked IC (SIC) technology. Maturity of the various processes has constantly improved. Early processes enabled first demonstration of circuit thinning and thin wafer debonding. Each material generation has brought a step function in the technology maturity, which is now reaching a level allowing first 3D-SIC...
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