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In this paper, a semi-analytical model for the gate-to-source/drain fringing capacitance (Cf) of MOSFET including process variations is presented. Cf is defined as a layout-dependent parasitic capacitance separated from gate-to-contact capacitance (Cco), and is composed of several dual-k perpendicular-plate capacitances. Layout-dependent coefficients such as gate to contact space (CPS) and contact...
In the nano-CMOS era, negative bias temperature instability (NBTI) has become one of the major limiting factors of circuit lifetime. Degradation caused by NBTI effect is profoundly affected by today's complicated circuit operations, such as dynamic voltage frequency scaling, in which power supply and frequency vary with time elapsing. Therefore, accurate NBTI prediction is essential to CMOS circuit...
NBTI (Negative Bias Temperature Instability) is a major concern in long-time circuit performance. In this paper, NBTI degradation models of basic logic gates have been developed based on the conventional reaction-diffusion (R-D) model which is used to predict the threshold voltage shift (ΔVTH) of p-type MOSFET. Besides load capacitance (CL), input slew rate (ti) and supply voltage (VDD), ΔVTH versus...
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