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This paper proposes a new configuration for power oscillator based on the combined power amplifier. The focus is on power combining as a oscillator structure with a positive feedback loop line. The proposed configuration consists of a harmonic-tuned combined power amplifier using two Gallium Nitride High Electron Mobility Transistors (CGH40025), 3dB Wilkinson divider/combiner, a directional coupler,...
In this paper, a frequency tunable, high-efficiency power oscillator using Gallium Nitride High Electron Mobility Transistor (GaN HEMT) for the RF power source applications is designed and fabricated. The steady state oscillation occurs in a delay line feedback loop which length is adjusted to tune oscillation frequency. A harmonic-tuned matching network technique is employed to obtain high conversion...
This paper describes the design and fabrication of a highly efficient switching-mode class-E Doherty power amplifier using gallium nitride (GaN) high-electron mobility transistor (HEMT) for S-band radar applications. Measured results of the Doherty amplifier show power-added efficiency (PAE) and drain efficiency of 62.6% and 73.1% at 37 dBm of 6 dB output back-off point from saturated output power...
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