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In recent years, a major challenge facing beamline implant tools is the low productivity of high dose p-type boron doping. A significant aspect of this challenge is the limited ion source life obtained when running boron trifluoride (BF3), the primary feed gas for boron doping. Use of BF3 often results in redistribution of tungsten within the arc chamber and source area due to the halogen cycle. Presented...
Ion implantation of germanium in silicon wafers is often troubled by reduced ion source life due to use of germanium tetrafluoride (GeF4) as a source material. The problem is mainly due to tungsten re-deposition, a result of a fluorine-induced halogen cycle initiated within the ion source. The halogen cycle is particularly pronounced in the case of GeF4 by easy fragmentation of the molecule, as well...
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