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Radiation effects were demonstrably observed in silicon carbide power MOSFETs caused by heavy ion and proton irradiation. For higher LET ions, permanent damage (increase in both drain and gate leakage current) was observed similar to SiC Schottky Barrier diodes in our previous study. For lower LET ions, including protons, Single Event Burnouts (SEBs) were observed and there was no leakage current...
The catastrophic failure mode caused by single-event gate rupture phenomenon observed in power MOSFETs still remains as a critical issue for those devices to be used in space radiation environments. Detailed analyses of the devices damaged by the phenomenon suggested a new possible mechanism. A preliminary model for the mechanism was proposed.
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