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This paper reports a wideband MMIC low noise amplifier using a 50nm Lg E-mode InGaAs PHEMT technology. It demonstrates simultaneous 22dB S21 gain and 1.0dB noise figure at 24GHz operation. The MMIC was designed for 18–35GHz bandwidth; however, noise figure is low and gain is appreciable from 4–40GHz. The amplifier survived being separately subjected to high-power bursts (18dBm Pin, 60-sec), and elevated...
Two antimonide-based compound semiconductor (ABCS) microstrip monolithic microwave integrated circuits (MMICs), i.e., single- and three-stage ultra-low-power wideband 0.3-11-GHz low-noise amplifiers (LNAs) using 0.1-mum gate-length InAs/AlSb metamorphic high electron-mobility transistors (HEMTs), have been fabricated and characterized on a GaAs substrate. The single-stage wideband LNA demonstrated...
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