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Implementation of thick Cu inductor in IC chips has been a highly challenging task for Far-backend packaging industry. One of the major concerns is that the thicker Cu trace wrapped by re-passivation polymer layers (Polymer-1 & Polymer-2) is often accompanied by remarkable internal stress in the overall package, which is plagued with the risk of layer-to-layer delamination and/or interface micro-cracks...
This paper presents global positioning system (GPS) antenna embedded in printed circuit board (PCB). The proposed antenna uses two chip capacitors and one chip inductor in order to control resonance frequency and degree of coupling, respectively. The effects of these lumped components are analyzed by using an equivalent circuit model of the proposed antenna. Bandwidth under voltage standing wave ratio...
A leading edge 32 nm high-k/metal gate transistor technology has been optimized for SoC platform applications that span a wide range of power, performance, and feature space. This technology has been developed to be modular, offering mix-and-match transistors, interconnects, RF/analog passive elements, embedded memory, and noise mitigation options. The low gate leakage of the high-k gate dielectric...
A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V and off-state leakage of 1 nA/um. Record RF performance for a mainstream 45 nm bulk CMOS technology has been achieved with measured fT/fMAX values...
A dual-output LLC resonant converter for LCD-TV applications is presented in this paper. Based on the LLC resonant behavior, the power MOSFETs are turned on at zero voltage switching (ZVS) and secondary rectifier diodes are turned off at zero current switching (ZCS). In the proposed converter, the primary windings of two transformers are connected in series so that the primary currents of two transformers...
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