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The subthreshold swing (SS) of metal–oxide‐semiconductor field‐effect transistors is limited to 60 mV dec−1 at room temperature by the Boltzmann tyranny, which restricts the scaling of the supply voltage. A nanogap‐based transistor employs a switchable nanoscale air gap as the channel, offering a steep‐slope switching process. Meanwhile, nanogaps featuring even sub‐3 nm can efficiently block the current...
Steep‐Slope Devices
In article number 2203017, Long You and co‐workers demonstrate a steep‐slope ambipolar transistor based on switchable ferroelectric nanogap with excellent performance, such as low subthreshold swing and high steep‐slope current densities, which has potential as a type of emerging steep‐slope device in the era of hyper Moore's law.
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