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W-band low-noise amplifier (LNA) has been successfully demonstrated with 50 nm metamorphic HEMT (MHEMT) technologies. 50 nm MHEMT showed a gm.max of 760 mS/mm, a fT of 216 GHz, and a fmax of 400 GHz in spite of indium content of 35 % in the channel. W-band LNA with three-stage showed the small signal gain of 9.4plusmn1.8 dB from 40 GHz to 110 GHz. These results are well suited for high frequency applications.
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