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Boron-doped p-type Ge layers were grown on n-type Si (100) wafers at various boron doping concentrations by using Rapid Thermal Chemical Vapor Deposition. The root-mean-square was surface roughness of p-type Ge layer increase from 0.708 nm to 19.980 nm as the doping concentrations increase from 3 × 1016 cm−3 to 4 × 1022 cm−3. From High Resolution X-ray diffraction, the in-plane lattice constants and...
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