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In this paper a novel power loop structure design is proposed and analyzed for converters based on Nitride Gallium transistors. Thanks to its innovative way to place the decoupling capacitors and the GaN devices, the proposed structure shows better results in terms of parasitic loop inductance than a classical 2-D power loop structure, leading to lower voltage stress over the GaN transistors (1.46...
We report a three‐terminal breakdown voltage over 3 kV on AlGaN/GaN high electron mobility transistors (HEMTs) grown on 6‐in. silicon (111) substrate with a buffer thickness of 5.5 μm. A local substrate removal all around the drain of the transistors has been developed in order to suppress the parasitic substrate conduction, which enables improving the device breakdown voltage by more than 200%. This...
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