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The memristive behavior of Al2O3-based device is significantly improved by introducing Ag nanoparticles (NPs). Inserting Ag NPs can effectively reduce the switching voltages, increase the resistance ratio (about 104) and enhance the sweep endurance (300 cycles). In particular, the stable switching properties are obtained by inserting an Ag NPs layer with an average diameter of 14 nm on the surface...
The excellent memristive behavior of ZnO-based devices with embedded Ti nano-layers is obtained. The results show that inserting Ti layers can effectively reduce the switching voltages and increase the Roff/Ron ratio (more than 103). In particular, the stable switching properties is obtained by introducing 2.5 nm Ti layer, and the devices show good sweep endurance (about 320 cycles) and a long retention...
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