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Optical properties of dielectric nano-sized sphere, embedded sphere and hemisphere arrays on SiN coated Si texture wafer were studied using the three dimensional finite-difference time-domain method. These arrays increase the photon currents each with an appropriate radius range. The spheres with a radius of 60 nm shows the strongest enhancement at normal incidence. The spheres can be seen as an additional...
The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.
Ge is an indirect bandgap material for research interest with possible photonic applications. In previous work, only direct bandgap emission was observed in the epitaxial Ge on Si, but both direct and indirect emissions were observed in the bulk Ge substrates. This discrepancy between epitaxial Ge and Ge substrate may be due to reabsorption of direct emission. In this work, the reabsorption is systematically...
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