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Beside silicon nitride, silicon rich SiO x is a good charge storage material for the charge trap type of nonvolatile memory due to the high density of the charge traps. In this study, the charge storage ability of various amorphous SiO x materials has been investigated. By controlling the ratio of N 2 O/SiH 4 gases from a 1:6 to a 2:1 input gas flow rate, the deposited...
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