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In the paper, the Ce doping is proposed to improve the thermal stability and increase the resistance in ZnSb thin film for phase-change memory (PCM) application. By Ce doping, it is proved that the resistance of amorphous and crystalline state, crystallization temperature (Tc), 10-year lifetime temperature (Tten) and activation energy (Ea) were significantly increased in ZnSb films. The improvement...
In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the...
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