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Dynamic thermal magnetization switching and magnetization switching variability determine nano-scale magnetic device performance. As a magnetic device scales down, achieving fast nanosecond time scale magnetization switching and maintaining thermal stability at second to years time scale become increasingly challenging. At the same time, the increased variability due to device dimension shrinking...
Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying...
Spin torque random access memory (ST-MRAM) design spaces down to CMOS 22 nm technology node are explored using a dynamic magnetic tunneling junction (MTJ)-CMOS model. The coupled dynamics of MTJ and CMOS is modeled by a combination of MTJ micromagnetic simulation and CMOS SPICE circuit simulation. The paper analyzes trade-offs between MTJ current threshold, MTJ thermal stability and CMOS driving strength...
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